Andrea C. Ferrari教授在意大利米兰理工大学获得核能工程学士学位，在剑桥大学获得电子工程博士学位。Andrea C. Ferrari是剑桥大学工程系与纳米科学中心—纳米材料和光谱学课题组组长及纳米技术专业的教授，是剑桥石墨烯研究中心创始人兼主任。Ferrari教授是剑桥彭布罗克学院的研究员，是美国物理协会会员，是英国皇家学会沃尔夫森研究优异奖获得者，同时也是欧盟石墨烯旗舰计划科技官兼管理部主席。Ferrari教授研究领域包括：纳米材料的生长、模型、表征及器件。目前，主要从事石墨烯、碳纳米管、类金刚石碳和纳米线在电子和光子器件中的应用研究。
2017年3月23日至31日，由国家新材料产业发展专家咨询委员会委员、中国石墨烯产业技术创新战略联盟秘书长李义春博士带领的中国石墨烯产业代表团一行先后访问了英国、法国的石墨烯研究机构。在访问剑桥大学期间，剑桥大学石墨烯中心（CGC）主任Andrea Ferrari教授介绍了其关于石墨烯在制备、电子器件、能量存储、生物医药和复合材料等方面的应用研究成果，其中多个项目适合在中国推广及产业化应用。
鉴于此，2017中国国际石墨烯创新大会组委会特邀请Ferrari教授做大会主题报告，介绍CGC在石墨烯方面的最新研究进展以及它们在工业中的应用。Ferrari教授也希望借助大会的平台，与国内机构展开合作，将一些适合产业化的项目拿到中国转化，积极推动中国及全球石墨烯产业的发展，敬请期待！
注：本文由中国石墨烯产业技术创新战略联盟原创，转载请注明出处！作者: grap43 时间: 2017-8-18 11:21 南京石墨烯大会顶级重咖来袭 |欧盟石墨烯旗舰计划科技官欲来华寻“如意郎君”
Andrea C. Ferrari教授在意大利米兰理工大学获得核能工程学士学位，在剑桥大学获得电子工程博士学位。Andrea C. Ferrari是剑桥大学工程系与纳米科学中心—纳米材料和光谱学课题组组长及纳米技术专业的教授，是剑桥石墨烯研究中心创始人兼主任。Ferrari教授是剑桥彭布罗克学院的研究员，是美国物理协会会员，是英国皇家学会沃尔夫森研究优异奖获得者，同时也是欧盟石墨烯旗舰计划科技官兼管理部主席。Ferrari教授研究领域包括：纳米材料的生长、模型、表征及器件。目前，主要从事石墨烯、碳纳米管、类金刚石碳和纳米线在电子和光子器件中的应用研究。
2017年3月23日至31日，由国家新材料产业发展专家咨询委员会委员、中国石墨烯产业技术创新战略联盟秘书长李义春博士带领的中国石墨烯产业代表团一行先后访问了英国、法国的石墨烯研究机构。在访问剑桥大学期间，剑桥大学石墨烯中心（CGC）主任Andrea Ferrari教授介绍了其关于石墨烯在制备、电子器件、能量存储、生物医药和复合材料等方面的应用研究成果，其中多个项目适合在中国推广及产业化应用。
鉴于此，2017中国国际石墨烯创新大会组委会特邀请Ferrari教授做大会主题报告，介绍CGC在石墨烯方面的最新研究进展以及它们在工业中的应用。Ferrari教授也希望借助大会的平台，与国内机构展开合作，将一些适合产业化的项目拿到中国转化，积极推动中国及全球石墨烯产业的发展，敬请期待！
Project Leader ：Jianshe Liua, James Sunga, Bo Zanga
Project Unit：Henan Graphene Synthetic Co.,LTD. , Renmin Road No.200, Changge City, China
Abstract
Aluminum and its alloys are widely used for automotive industry, 3C products, aerospace and others. However, to cope with the low melting point and low strength of aluminum, additive elements are added. For example, aluminum frames for car tires are added with silicon to enhance its strength. Carbon may be added to aluminum as additive, but almost all carbon additives are reactive to aluminum to form carbide and the unreacted carbon clusters are weak. By adding low defects density graphene to molten aluminum, the graphene honeycomb can be preserved with edges forming Al4C3 that contains strong carbyne sp1 bonds. If graphene is well dispersed 1wt% addition in aluminum can be stronger than 18wt% of silicon. Since grahene can be 100X more efficient in conducting electricity than aluminum, the graphene reinforced aluminum cable may replace steel for the transmission high voltage electricity.
Figures
Fig. 3. Defect free graphene will form weak van der Waals bonds along honeycomb lattice of carbon atoms, but the dangling electrons on periphery will chemically react will aluminum to form super strong carbyne chains. As a result, graphene enhanced aluminum alloy can be stronger than 10x more expensive titanium alloys.
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Vladimir Falko教授是英国凝聚态物理理论领域的领军人物之一，他在石墨烯的电学和光学特性方面做出了大量卓越的贡献，其中包括双层石墨烯的发现。Falko教授在固态物理研究所获得了博士学位，随后在马克斯-普朗克研究所和牛津大学从事博士后研究工作。在他从业的前20年中，一直在兰卡斯特大学任教，并任命为特聘教授。2015年，他担任英国曼彻斯特大学国家石墨烯研究院主任，成为站在石墨烯行业金字塔顶端的人之一。同时他还担任英国曼彻斯特大学石墨烯NOWNANO博士训练中心主任。
Falko教授在塑造欧洲石墨烯及其他二维材料研究群体中发挥着至关重要的作用，此外，他还组织建立了石墨烯周系列会议，领导欧洲石墨烯旗舰计划工作等，包括石墨烯及其他二维材料的基础科学研究。Falko教授的研究领域主要包括石墨烯及相关二维原子的原子晶体：电子运输及光电性能；二维原子材料的异质结构（石墨烯-六方氮化硼等）；强关联二维材料的量子霍尔效应；纳米电子学、 自旋电子学和纳米机电系统的基本原理；半导体量子点的量子光学及光学特性等的研究。
基于Falko教授在石墨烯基础研究与应用方面所做出的杰出贡献，2017中国国际石墨烯创新大会组委会特邀请他做大会报告，与大家分享英国曼彻斯特大学国家石墨烯研究院近期的科研成果。Falko教授也希望借助大会的平台，与国内机构展开积极的交流与合作，为中国乃至全球的石墨烯产业发展贡献力量。敬请关注！
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“羽毛上的汽车”——石墨烯強化铝合金|南京石墨烯大会百项成果展
Project Leader ：Jianshe Liua, James Sunga, Bo Zanga
Project Unit：Henan Graphene Synthetic Co.,LTD. , Renmin Road No.200, Changge City, China
Abstract
Aluminum and its alloys are widely used for automotive industry, 3C products, aerospace and others. However, to cope with the low melting point and low strength of aluminum, additive elements are added. For example, aluminum frames for car tires are added with silicon to enhance its strength. Carbon may be added to aluminum as additive, but almost all carbon additives are reactive to aluminum to form carbide and the unreacted carbon clusters are weak. By adding low defects density graphene to molten aluminum, the graphene honeycomb can be preserved with edges forming Al4C3 that contains strong carbyne sp1 bonds. If graphene is well dispersed 1wt% addition in aluminum can be stronger than 18wt% of silicon. Since grahene can be 100X more efficient in conducting electricity than aluminum, the graphene reinforced aluminum cable may replace steel for the transmission high voltage electricity.
Figures
Fig. 3. Defect free graphene will form weak van der Waals bonds along honeycomb lattice of carbon atoms, but the dangling electrons on periphery will chemically react will aluminum to form super strong carbyne chains. As a result, graphene enhanced aluminum alloy can be stronger than 10x more expensive titanium alloys.
高响应度非聚焦激光和白光光源化学气相沉积石墨烯光电探测器|南京石墨烯大会百项成果展
High responsivity sensing of unfocused laser and white light using graphene photodetectors grown by chemical vapor deposition
Project Leader ：Yibo Dong
Project Unit：Key Laboratory of Optoelectronics Technology, School of Electronic Information and Control Engineering, Beijing, University of Technology, Beijing 100124, China
Abstract
AGraphene photodetectors grown by chemical vapor deposition are fabricated for unfocused laser and white light sensing. The unfocused light enlarges the illuminated graphene area and mimics the real-life sensing conditions, yielding a responsivity of 104 mA/W at room temperature without enhancing absorbance by waveguide and plasmonics. The devices are based on positive photoconductivity from the electron-hole photocarrier pairs and the bolometric-effect-induced negative photoconductivity. The buried off-center local gate induces a net internal potential in the graphene. The relative strength of the two photoconductivities depends on the gate voltage. Distinct from most of the previous works, our technology is scalable, which is a step ahead toward real applications.
Figures
电化学法双电极剥离制备石墨烯|南京石墨烯大会百项成果展
Electrochemical Exfoliation of Double Graphite Electrode into Hight-Quality Graphene
Project Leader ：Le Li
Project Unit：Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
Abstract
Although the extensitive research efforts devoted to graphene fabrication over the past decade, the production of high-quality and large-scale graphene by simple and cost-effective means still constitute significant issues in the path of their widespread implementation. In this study, we developed a scalable exfoliation strategy towards the production of low oxygen content graphene sheets that is based on electrochemical exfoliation of double graphite electrode by applying alternating currents. By reducing the temperature of electrochemical exfoliation to investigate of regulation of the radicals and thus control the exfoliation process. The electrochemical performance of the as-prepared graphene by reducing the temperature electrode exhibited a high specific solid capacitance of 8.33 F g-1 (Figure 2a) at a current density of 1 mV s-1, when the temperature of electrochemical exfoliation is reduced to 5℃ (Figure 1a). However, the graphene (2.51 F g-1, 1 mV s-1 (Figure 2a)) in the electrochemical exfoliation process at room temperature (Figure 1b). Furthermore, pre-treatment of graphite foil with concentrated H2SO4 and (NH4)2SO4, we found that the electrochemical performance of the as-prepared graphene exhibited a high specific solid capacitance of 8.55 F g-1 and 7.89 F g-1 (Figure 2b). In general, this efficient and cost-effective method for electrochemical exfoliation of graphite offers great promise for the preparation of graphene that can be utilized in industrial applications to create integrated nanocomposites, conductive or mechanical additives, as well as energy storage and conversion devices.
Figures
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Controllable preparation of hafnium disulfide and graphene
and study on their electronic properties
Project Leader ：Yunqi Liu
Project Unit：Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
Abstract：
The family of two dimensional (2D) materials has been rapidly expanding its members over the past few years due to their distinct properties and attractive applications. Beyond the zero bandgap graphene, 2D transition metal dichalcogenides (TMDs) with the formula MX2 (where M = transition metal and X = chalcogen) provide a much broader range of material-and dimension-modulated versatility of properties, which makes them applied to electronics, optoeletronics, valleytronics, spintronics, and catalysis.[1–5] Among the related various research fields, the exploration of these new materials, which generally involves the central issues regarding the scalable synthesis and structure-property relationship, has historically proven an important role in advancing the fundamental science and applications.
As a member of group IVB TMDs family, hafnium disulfide (HfS2) was recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high-quality HfS2 crystals, sparsely reported, has greatly hindered the development of this new field. Here, we report a facile strategy for controlled synthesis of high quality atomic layered HfS2 crystals by van der Waals epitaxy for the first time.[1] Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S-edge and Hf-edge. Impressively, the HfS2 back-gate field-effect transistors display a competitive mobility of 7.6 cm2 V−1 s−1 and a ultrahigh on/off ratio exceeding 108. Meanwhile, ultrasensitive near-infrared phototransistors based on the HfS2 crystals (indirect bandgap ~1.45 eV) exhibits an ultrahigh responsivity exceeding 3.08 × 105 A W1, which is 109-fold higher than 9 × 105 A W1 obtained from the multilayer MoS2 in near-infrared photodetection. Moreover, an ultrahigh photogain exceeding 4.72 × 105 and an ultrahigh detectivity exceeding 4.01 × 1012 Jones, superior to the vast majority of the reported 2D materials based phototransistors, imply a great promise in TMD-based 2D electronic and optoelectronic applications.
In addition to the HfS2, controllable preparation of graphene and its electronic properties are also involved in this presentation.[25]
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基于优化碳化硅衬底碳面预处理条件制备大晶畴高迁移率外延石墨烯
Large Domain and High Mobility Epitaxial Graphene on C Face of SiC Obtained by Optimizing Pretreatment of Substrate
Project Leader ：Fusheng Zhang
Project Unit：State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
Abstract：
Thermal decomposition of SiC is a promising technique of fabricating wafer scale and low defect graphene. It owns good compatibility with traditional semiconductor technology. Due to the weak interaction between epitaxial graphene (EG) and substrate, the EG on C face of SiC behaves like freestanding monolayer graphene and shows high mobility. In this study, the SiC substrates were pretreated under nearly balanced H-etching conditions: etched in 200 mbar of pure H2 at 1450°C. Then, the EG films were fabricated under Ar pressure of 900 mbar at 1630°C. The 4H-SiC (000-1) surface with the regular wide steps and free of etch pits has been obtained by optimizing H-etching parameters. The surface morphology, strain, and domain size of EG were systematically investigated by AFM, SEM and Raman spectroscopy. The results indicate that the regular surface morphology of substrate can greatly increase the domain size of EG to tens micrometers and sustain the spontaneous growth mechanism to form the decoupled graphene layers. This way significantly improves the structural quality and the Hall mobility reaching up to 9075 cm2/Vs. This kind of EG will be more suitable for the use of ultrahigh frequency electronic devices.
Figures
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侯士峰博士，山东大学国家胶体材料工程技术研究中心特聘教授，蒙特克莱尔州立大学副教授，济宁利特纳米技术有限责任公司董事长，济宁市碳纳米材料研究中心主任，青岛国际石墨烯创新中心副理事长，国家 “千人计划”专家，济宁市海外人才引进“511”计划专家，中国石墨烯产业技术创新战略联盟副秘书长，石墨烯国家标准委员会委员；山东省石墨烯产业技术创新战略联盟理事长，新泽西州技术委员会(New Jersey Technology Council) 委员，美国化学会，材料学会、电化学学会会员。侯博士先后于山东大学和南京大学获得学士学位和博士学位，其后在北京大学、美国康涅狄格大学和佛罗里达大学从事博士后研究。2005年进入交联聚合物研究公司（Crosslink olymer Research Company）担任高级研究员，2008年加入蒙特克莱尔州立大学任助理教授，2013晋升为副教授。同年，创办济宁碳纳米材料研究中心和济宁利特纳米科技有限责任公司。2014年在青岛市高新技术产业开发区建立青岛瑞利特新材料科技有限公司。
侯士峰教授多年来从事纳米技术研究，在碳材料尤其是碳纳米系列材料方面有着丰富的工业研发、实用技术开发经验，并拥有相关碳纳米材料方面的多项专利。由侯士峰教授领军建立的济宁碳纳米材料研究中心，主要从事石墨烯碳纳米材料基础研究及在环境、能源方面的应用，重大环境污染问题的早期预警监测系统，生物纳米材料等；由其建立的另一家公司——瑞利特公司，作为国内首批石墨烯应用领域产业化的开拓者，公司产品主要有石墨烯复合材料、石墨烯家居涂料以及石墨烯工业防腐涂料等。
基于侯士峰教授在石墨烯制备与应用方面所做出的杰出贡献，2017中国国际石墨烯创新大会组委会特邀请他在石墨烯在防腐涂料中的应用论坛中做特邀报告，与大家分享他与石墨烯之间的故事。侯士峰教授也希望借助大会的平台，能够与更多的国内外机构展开积极的交流与合作，为中国乃至全球的石墨烯产业发展贡献力量。敬请关注！
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不同类表面活性剂对石墨烯在水溶液分散的影响及水性石墨烯导电油墨的制备
The dispersion effect of diversified surfactants on graphene in aqueous system and the preparation of waterborne graphene conductive ink
Project Leader ：Liting Zhang
Project Unit：Shenyang Research Institute of chemical industry Shen Liao Road No.8, Tiexi District, Shenyang
Abstract：
The dispersion of graphene in aqueous solution directly affects the conductive properties of the subsequent conductive ink. the effect of different types of surfactants on the dispersibility of water-based graphene was evaluated by testing the conductive ink resistance prepared with 20 kinds of surfactants as graphene dispersants. And then by measuring the absorbance of graphene dispersion, compared with different molecular weight surfactant dispersion performance. The results shown :1 Compared with cationic and nonionic surfactants, anionic surfactants have better dispersibility than grapheme;2 big molecular weight and the π-π conjugate structure of The anionic surfactant are better at dispersing.
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Luigi Colombo教授出生于意大利，1980年在罗切斯特大学的材料科学获得博士学位。1981年，他加入德州仪器（TI），从事各种材料研发项目。 自2009年起一直在德克萨斯大学达拉斯分校材料科学与工程系兼职教授。Luigi Colombo教授还编写了140多篇参考文献、150余篇作者介绍、合作编写了3本图书、拥有美国专利和国际专利108项。 1999年，他被选为TI的研究员，2011年被选为IEEE研究员。
Luigi Colombo教授近期与德克萨斯大学奥斯丁分校的Ruoff小组开展了一些列的合作，发现并开发了一种大面积的石墨烯薄膜生长工艺。基于Luigi Colombo教授在石墨烯薄膜制备和产业化方面所取得的杰出成果，2017中国国际石墨烯创新大会组委会特邀请他做大会报告，与大家分享他与石墨烯之间的故事。Luigi Colombo教授也希望借助大会的平台，能够与更多的国内外机构展开积极的交流与合作，为中国乃至全球的石墨烯产业发展贡献力量。敬请关注！
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二维材料家族的“黑白双煞”
White Graphene Manufacture
Project Leader ：James Sung
Project Unit：Henan Graphene Synthetic Co.,LTD. , Renmin Road No.200, Changge City, China
Abstract：
There are only two types of 2D lattice made of sp2 orbital hybridization, black graphene made of carbon atoms, and white graphene made of hexagonal boron nitride. Other so called 2D materials, such as MoS2 are not atomistically planar, so they do not have the benefit of sp2 pi bonds. This is because that sp2 bonding can only be formed with atoms that contains no inner p orbitals. Just like that graphene can be physically stressed graphite, so white graphene is derived from flakes of hexagonal boron nitride. White graphene is lattice compatible with black graphene of mismatch less than 1%, hence, they can be bonded seamlessly or even to form hetero-epitaxy similar to even to form homo-epitaxy. As a result, this conductive-insulating pair has extreme applications. For examples, proton exchange membrane (PEM) for fuel cells, sea water desalination membrane, transparent LED, foldable display, single electron transistors with 1nm thin integrated circuits and other exotic devices. Figures
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